Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

ABSTRACT

Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask.

REFERENCE TO RELATED APPLICATION

This application is a Continuation of U.S. application Ser. No.14/990,911, filed on Jan. 8, 2016, which is a Divisional of U.S.application Ser. No. 14/023,552, filed on Sep. 11, 2013 (now U.S. Pat.No. 9,257,636, issued on Feb. 9, 2016). The contents of theabove-referenced patent applications are hereby incorporated byreference in their entirety.

BACKGROUND

The following disclosure relates to non-volatile memory (NVM), and inparticular to magnetic random access memory (MRAM). MRAM offerscomparable performance to volatile static random access memory (SRAM)and comparable density with lower power consumption to volatile dynamicrandom access memory (DRAM). Compared to NVM Flash memory, MRAM offersmuch faster access times and suffers minimal degradation over time,whereas Flash memory can only be rewritten a limited number of times.

An MRAM cell is formed by a magnetic tunneling junction (MTJ) comprisingtwo ferromagnetic layers which are separated by a thin insulatingbarrier, and operates by tunneling of electrons between the twoferromagnetic layers through the insulating barrier. Scaling of MRAMmemory cells in advanced technology nodes (i.e., Node 28 and beyond) islimited by the resolution limit of optical lithography. At the lowerresolution limit of optical lithography MJT size variation between MRAMcells within an MRAM array can degrade memory performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1B illustrate perspective views of a magnetic tunnelingjunction (MJT) within an MRAM cell.

FIG. 1C illustrates an MRAM cell array.

FIGS. 2A-2B illustrate cross-sectional views of some embodiments of amagnetic memory device.

FIG. 2C illustrates a top-down view of some embodiments of a magneticmemory cell array.

FIG. 3 illustrates a top-down view of some embodiments of a blockcopolymer utilized to form the magnetic memory cell array of FIGS.2A-2C.

FIGS. 4A-4C illustrate some embodiments of direct self-assembly (DSA) offirst and second polymer species within a copolymer solution into apolymer matrix comprising micro-domains.

FIGS. 5A-5D of illustrate perspective views of some embodiments of MRAMcell array patterning with a block copolymer.

FIGS. 6A-6F of illustrate cross-sectional views of some embodiments ofMRAM cell array patterning with a block copolymer and hardmask (HM).

FIG. 7 illustrates some embodiments of a method of forming an MRAM cellarray with a copolymer.

FIG. 8 illustrates some embodiments of a tool arrangement configured toform an MRAM cell array with a copolymer.

DETAILED DESCRIPTION

The description herein is made with reference to the drawings, wherelike reference numerals are generally utilized to refer to like elementsthroughout, and where the various structures are not necessarily drawnto scale. In the following description, for purposes of explanation,numerous specific details are set forth in order to facilitateunderstanding. It is evident, however, that one or more aspectsdescribed herein may be practiced with a lesser degree of these specificdetails. In other instances, known structures and devices are shown inblock diagram form to facilitate understanding.

Some aspects of the present disclosure relate to scaling techniques formagnetic random access memory (MRAM) cells. FIGS. 1A-1B illustrateperspective views of an MJT 100 within an MRAM memory cell. The MJT 100includes an upper ferromagnetic plate 102 and a lower ferromagneticplate 104, which are separated by a thin insulating layer 106, alsoreferred to as a tunnel barrier layer. One of the two ferromagneticplates (e.g., the lower ferromagnetic plate 104), is a magnetic layerthat is pinned to an antiferromagnetic layer, while the otherferromagnetic plate (e.g., the upper ferromagnetic plate 102) is a“free” magnetic layer that can have its magnetic field changed to one oftwo or more values to store one of two or more corresponding datastates.

The MTJ 100 uses tunnel magnetoresistance (TMR) to store magnetic fieldson the upper and lower ferromagnetic plates 102, 104. For sufficientlythin insulating layer 106 thicknesses (e.g., about 10 nm or less),electrons can tunnel from the upper ferromagnetic plate 102 to the lowerferromagnetic plate 104. Data may be written to the cell in a variety ofways. In one method, current is passed between the upper and lowerferromagnetic plates 102, 104, which induces a magnetic field which isstored in the free magnetic layer (e.g., the upper ferromagnetic plate102). In another method, spin-transfer-torque (STT) is utilized, whereina spin-aligned or polarized electron flow is used to change the magneticfield within the free magnetic layer with respect to the pinned magneticlayer. Other methods to write data may be used. However, all data writemethods include changing the magnetic field within the free magneticlayer with respect to the pinned magnetic layer.

The electrical resistance of the MJT 100 changes in accordance with themagnetic fields stored on the upper and lower ferromagnetic plates 102,104, due to the magnetic tunnel effect. For example, in FIG. 1A themagnetic fields of the upper and lower ferromagnetic plates 102, 104 arealigned (see arrows 108A, 110A), resulting in a low-resistance state(i.e., a logical “0” state). In FIG. 1B a current has been passedthrough the MJT 100 to induce a change in the magnetic field of themagnetic free layer (e.g., upper ferromagnetic plate 102). Therefore,after this data write operation the magnetic fields in of the upper andlower ferromagnetic plates 102, 104 oppose one another (see arrows 110A,110B), which gives rise to a high resistance state (i.e., a logical “1”state). Hence, by measuring the electrical resistance between the upperand lower ferromagnetic plates 102, 104, read circuitry coupled to theMJT 100 can discern between “0” and “1” data states.

FIG. 1C illustrates an MRAM cell array 100C, which includes M rows(words) and N columns (bits) of MRAM cells, each comprising an MJT 100,wherein individual cells are labeled C_(row-column). Wordlines WL1, . .. , WLM extend across respective rows of memory cells and bitlines BL1,. . . , BLN extend along columns. To write data to a row of cells, awordline (WL) is asserted to select a row and appropriate biases areapplied to the individual bitlines (BLs) to write respective values tothe respective MRAM cells of the selected row. When data is written toor read from multiple cells along a row (e.g., a multi-bit word), dataerrors can occur for one or more MRAM cells due manufacturing variationsacross the memory array can lead to erroneous bits being written to theMRAM cell array 100C.

For MRAM cell arrays patterned at the lower resolution limit of opticallithography, non-uniformity in the dimensions of the MJT 100 within theMRAM cells of the MRAM cell array 100C drives a non-uniform currentdensity and variation in read/write characteristics between the MRAMcells. Non-uniformity in the dimensions of the MJT 100 also leads to avariation in coercivity between the MRAM cells due to the sizevariation. Additionally, the size and density of the MJT 100 is limitedby the lower resolution limit of optical lithography (i.e., width lowerlimit of about 40 nm). Variation in the volume of the MJT 100 also leadsto non-uniform thermal stability which also contributes to variablemagnetoresistance between the MRAM cells.

Accordingly, some embodiments of the present disclosure relate to amethod that achieves a substantially uniform pattern of MTJs within MRAMcells of an MRAM cell array, and further achieves a minimum MJTdimension below the lower resolution limit of some optical lithographytechniques. A copolymer solution comprising first and second polymerspecies is spin-coated over a heterostructure which resides over asurface of a substrate, wherein the heterostructure comprises first andsecond ferromagnetic layers which are separated by an insulating layer.The copolymer solution is subjected to self-assembly into aphase-separated material comprising a regular pattern of micro-domainsof the second polymer species within a polymer matrix comprising thefirst polymer species. The first polymer species is then removedresulting with a pattern of micro-domains of the second polymer species.A pattern of magnetic memory cells within the heterostructure is formedby etching through the heterostructure while utilizing the pattern ofmicro-domains formed by the second polymer species as a hardmask.

FIG. 2A illustrates a cross-sectional view of some embodiments of amagnetic memory device 200A, comprising an array 200C of MRAM cells200B. The memory device 200A is formed on a dielectric material 204disposed over a substrate 202. In some embodiments, the substrate 202comprises silicon (Si) or silicon-on-insulator (SOI). Alternatively, thesubstrate 202 may comprise another elementary semiconductor. In someembodiments, the dielectric material 204 comprises silicon dioxide(SiO₂). Each MRAM cell 200B comprises an MJT 100 with a diameter (d) ofless than 100 nm. Moreover, the space (s) between adjacent MJTs 100within the array 200C is also less than 100 nm. In some embodiments, thediameter (d) or space (s) of the MJTs 100 is less than 40 nm, whenformed with the tools and methods disclosed herein.

FIG. 2B illustrates a cross-sectional view of some embodiments of theMRAM cell 200B, comprising an MJT 100 which comprises upper and lowerferromagnetic plates 102, 104 which are separated by an insulating layer106. In some embodiments, the upper and lower ferromagnetic plates 102,104 comprise cobalt iron boron (CoFeB), cobalt iron (CoFe), acobalt/palladium (Co/Pd) multilayer structure, a cobalt platinum (Co/Pt)multilayer structure, or a combination thereof. In some embodiments, theinsulating layer 106 comprises magnesium oxide (MgO). In someembodiments, the lower ferromagnetic plate 104 is formed on anantiferromagnetic layer (not shown) to fix an orientation of themagnetic field within the lower ferromagnetic plate 104, while leavingthe orientation of the magnetic field within the upper ferromagneticplate 102 free to change orientation to achieve memory storage withinthe MRAM cell 200B. In some embodiments, a capping layer (not shown) isdisposed over the upper ferromagnetic plate 102, wherein the cappinglayer may include aluminum oxide (AlOx), MgO, tantalum (Ta), ruthenium(Ru), a combination thereof, or any other suitable dielectric material.In some embodiments, the MJT 100 comprises a thickness (t) of less than300 nm. In some embodiments, the MJT 100 comprises a cylindrical shapewith a first diameter (d₁) less than 40 nm.

The MRAM cell 200B further comprises first and second spacers 210A, 210Bvertically-disposed adjacent the MJT 100, and configured to providelateral isolation of the MJT 100. In some embodiments, the first andsecond spacers 210A, 210B one or more materials selected from the groupconsisting of silicon nitride (SiN), silicon oxide (SiOx), or siliconoxynitride (SiON). Other embodiments may utilize other suitabledielectric materials for isolation.

The MRAM cell 200B further comprises upper and lower electrodes 206, 208which contact the upper and lower ferromagnetic plates 102, 104,respectively. In some embodiments, the upper and lower electrodes 206,208 comprise tantalum (Ta), chromium (Cr), gold (Au), ruthenium (Ru), ora combination thereof. In some embodiments, the upper and lowerelectrodes 206, 208 comprise a thickness in a range of about 10 nm toabout 100 nm. In some embodiments, the lower electrodes 208 comprises acylindrical shape with a second diameter (d₂) which is greater than thefirst diameter (d₁) of the MJT 100 and upper electrode 206.

FIG. 2C illustrates a top-down view of some embodiments of the magneticmemory cell array 200C, formed in accordance with the patterning methodsof the present disclosure. The memory cell array 200C comprises MJTs 100disposed on the dielectric material 204 and surrounded by a sidewallmaterial 210 from which the first and second spacers 210A, 210B areformed. For the embodiments of FIGS. 2A-2C, the memory cell array 200Cis configured in a periodic hexagonal close-packed (HCP) arrangement,wherein the MJTs 100 comprises a diameter (d) and minimum space (s) ofless than 40 nm.

The magnetic memory cell array 200C of the embodiments of FIGS. 2A-2C isformed through a pattern transfer from a block copolymer 300 asillustrated in FIG. 3 by patterning methods disclosed in subsequentembodiments herein. The block copolymer 300 comprises first and secondpolymer species A, B, wherein the first polymer species A forms apolymer matrix 302, wherein a plurality of micro-domains 304 of thesecond polymer species B reside in an HCP arrangement, and wherein themicro-domains 304 comprises a diameter (d) and minimum space (s) of lessthan 40 nm.

In some embodiments, formation of the block copolymer 300 comprisesspin-coating a substrate with a copolymer solution comprising the firstand second polymer species A, B. The substrate is then annealed througha thermal anneal or solvent anneal process, which results in aself-assembly of the copolymer solution into a phase-separated material(i.e., block copolymer 300). The first polymer species A may then beremoved (i.e., the polymer matrix 302) through an oxygen reactive ionetch (RIE), which leaves the pattern of micro-domains 304 of the secondpolymer species B which form a hardmask (HM) for patterning.

In some embodiments, the copolymer solution comprisespoly(styrene-block-methylmethacrylate) (PS-b-PMMA), wherein the firstpolymer species A comprises poly(methyl methacrylate) (PMMA), and thesecond polymer species B comprises polystyrene (PS). In someembodiments, the PS-b-PMMA block copolymer 300 is spin-coated onto asubstrate, and promoted to self-assemble by thermal annealing or bysolvent annealing an inert atmosphere, to achieve a cylindrical phaseblock copolymer film, wherein the PMMA forms the polymer matrix, and thePS forms the pattern of self-assembled cylindrical micro-domainsoriented parallel the surface of the substrate. The copolymer film isthen irradiated with ultraviolet (UV) radiation, which promotescross-linking of the PS molecules through the removal of one hydrogenfrom a benzene-bonded carbon of the PS polymer chain, such that two PSpolymer units 400A or chains of such ionized units may cross-link, asillustrated in FIG. 4A. The UV radiation simultaneously degrades thePMMA polymer unit 400B through the removal of one hydrogen from amethylidene molecule (CH₂) bonded to two carbons of the PMMA polymerunit 400B, as illustrated in FIG. 4B. After UV irradiation, the PMMA maybe removed through an oxygen (e.g., 02 plasma) RIE.

In various embodiments, the PMMA may form the micro-domains within thePS matrix, or the PMMA may form the matrix comprising PS micro-domains.FIG. 4C, illustrates some embodiments of various morphologies 400C ofthe first and second polymer species, A, B as a function of relativevolume fraction. For a nearly equal volume fraction of the first andsecond polymer species A, B in an equilibrium configuration, a lamellar(layered) copolymer structure is formed. Cylindrical micro-domainstructures are formed as the volume fraction of species A or B isdecreased relative to species B or A. Spherical micro-domains form thewhen the volume fraction of species A or B is further decreased relativeto species B or A. The values of volume fractions that achieve thesevolume-fraction-dependent morphologies are dependent upon the conditionsunder which the copolymer was formed (e.g., the annealing conditions) aswell as the types of first and second polymer species A, B. For theembodiments of FIG. 3, the polymer matrix 302 comprises PMMA which isremoved, leaving the micro-domains 304 comprising PS to act as ahardmask (HM) for patterning.

FIGS. 5A-5D of illustrate perspective views of some embodiments of MRAMcell array patterning with a block copolymer. FIG. 5A illustrates aperspective view of a patterning stack 500A, comprising a substrate 202(e.g., Si) whereupon a layer of dielectric material 204 (e.g., SiO₂) isdisposed. A bottom electrode layer 502 (e.g., Ta) is disposed through anappropriate layer growth techniques. Some layer growth techniquescomprise sputter deposition, molecular beam epitaxy (MBE), pulsed laserdeposition (PLD), atomic layer deposition (ALD) and electron beam(e-beam) epitaxy, chemical vapor deposition (CVD), or derivative CVDprocesses further comprising low pressure CVD (LPCVD), atomic layer CVD(ALCVD), ultrahigh vacuum CVD (UHVCVD), reduced pressure CVD (RPCVD), orany combinations thereof.

Above the bottom electrode layer 502, a heterostructure is formedcomprising first and second ferromagnetic layers 102, 104 (e.g., CoFeB)which are separated by an insulating layer 106 (e.g., MgO). Above theheterostructure a top electrode layer 504 (e.g., Ta) is disposed throughan appropriate layer growth technique.

Above the top electrode layer 504, a block copolymer is formedcomprising a polymer matrix 302 comprising a first polymer species(e.g., PMMA), and a pattern of micro-domains 304 formed within thepolymer matrix 302 by a second polymer species (e.g., PS). In someembodiments, the micro-domains 304 reside in an HCP arrangement, andcomprises a cylindrical shape with a diameter and minimum space of lessthan 40 nm. In some embodiments, the block copolymer comprises athickness of less than 1,000 angstroms

FIG. 5B illustrates a perspective view of a patterning stack 500B,comprising the patterning stack 500A, wherein the polymer matrix 302 hasbeen removed through an etch process (e.g., 02 plasma RIE), forming apattern of polymer pillars (e.g., remaining micro-domains 304)comprising the second polymer species over the patterning stack 500B.

FIG. 5C illustrates a perspective view of a patterning stack 500C,comprising the patterning stack 500B, wherein an etch is performedthrough the top and bottom electrode layers 504, 502, and theheterostructure (102, 104, 106), by utilizing the pattern of polymerpillars (304) as a hardmask. The etch may comprise a dry etch, wet etch,or a combination thereof. As a result of the etch, a pattern ofcylindrical shapes is formed, which is substantially identical to thepattern polymer pillars (304) (i.e., an HCP arrangement of thecylindrical shapes with a diameter and minimum space of less than 40nm).

FIG. 5D illustrates a perspective view of a patterning stack 500D,comprising the patterning stack 500C, wherein the polymer pillars (304)have been removed by an etch process (e.g., RIE), leaving a pattern ofmagnetic memory cells 506, wherein a magnetic memory cell 506 comprisesa top electrode formed from the a top electrode layer 504, a bottomelectrode formed from the bottom electrode layer 502, and an MJT 100formed from the first and second ferromagnetic layers 102, 104, and theinsulating layer 106.

FIGS. 6A-6F of illustrate cross-sectional views of some embodiments ofMRAM cell array patterning with a block copolymer and hardmask (HM).FIG. 6A illustrates a cross-sectional view of a patterning stack 600A,comprising a substrate 202 whereupon a layer of dielectric material 204is disposed. A heterostructure is formed over the layer of dielectric204 material, wherein the heterostructure comprises a top and bottomelectrode layers 504, 502 disposed above and below an MJT layer, whereinthe MJT layer comprises first and second ferromagnetic layers 102, 104which are separated by an insulating layer 106.

A first hardmask (HM) layer 602 is disposed over the heterostructure(i.e., top electrode layer 504) by an appropriate layer depositiontechnique (e.g., ALD, CVD, etc.). In some embodiments, the first HMlayer 602 comprises oxide (Ox), silicon oxynitride (SiOx), siliconnitride (SiN), silicon oxycarbide (SiOC), silicon carbide (SiC), orsuitable combination thereof. Above the first HM layer 602 a blockcopolymer is formed comprising a polymer matrix 302 comprising a firstpolymer species, and a micro-domain 304 formed within the polymer matrix302 by a second polymer species.

FIG. 6B illustrates a cross-sectional view of a patterning stack 600B,comprising the patterning stack 600A, wherein the polymer matrix 302 isremoved, leaving the micro-domain 304 which forms a pillar to serve as asecond HM layer.

FIG. 6C illustrates a cross-sectional view of a patterning stack 600C,comprising the patterning stack 600B, wherein a first etch has beenperformed through the top electrode layer 504 and MJT layer (102, 104,106). In some embodiments, the first etch may comprise transfer of thepattern of the polymer pillar (304) (e.g., cylindrical pattern) into thefirst HM layer 602 trough an intermediate etch step, followed by theremoval of the polymer pillar (304) prior to the etch. In someembodiments, the first etch may utilize the first HM layer 602 and thepolymer pillar (304) as a second HM layer together with no intermediateetch step.

In some embodiments, the first HM layer 602 and the polymer pillar (304)are removed after the first etch, as illustrated in the embodimentspatterning stack 600D of FIG. 6D. In some embodiments, the polymerpillar (304) is removed and the first HM layer 602 is left forsubsequent patterning steps. In some embodiments, both the first HMlayer 602 and the polymer pillar (304) are left for subsequentpatterning steps.

FIG. 6E illustrates a cross-sectional view of a patterning stack 600E,comprising the patterning stack 600D, wherein a sidewall material (210)is deposited over the patterning stack 600D, and etched to removeportions of the sidewall material (210) horizontally-disposed on thesurface of the top and bottom electrode layers 504, 502, while leavingportions of the vertically-disposed sidewall material (210) adjacent thetop electrode layer 504 and MJT 100 substantially intact, which formfirst and second spacers 210A, 210B. In some embodiments, the sidewallmaterial (210) is deposited using ALD, CVD, or another appropriatemethod, and can be any suitable dielectric (e.g., SiN, SiOx, and SiON),and may be deposited in situ to minimize contamination.

FIG. 6F illustrates a cross-sectional view of a patterning stack 600F,comprising the patterning stack 600E, wherein a second etch is performedto etch through the bottom electrode layer 502 by utilizing the topelectrode layer 504 and vertically-disposed first and second spacers210A, 210B as third HM layer to form an MRAM cell. The MRAM cellcomprises a top electrode formed from the top electrode layer 504, anMJT 100 comprising the etched MJT layer, and a bottom electrode formedfrom the bottom electrode layer 502, wherein the bottom electrode iswider than the top electrode.

FIG. 7 illustrates some embodiments of a method 700 of forming an MRAMcell array with a copolymer. While method 700 is illustrated anddescribed below as a series of acts or events, it will be appreciatedthat the illustrated ordering of such acts or events are not to beinterpreted in a limiting sense. For example, some acts may occur indifferent orders and/or concurrently with other acts or events apartfrom those illustrated and/or described herein. In addition, not allillustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 702 a heterostructure is formed over a layer of dielectric materialdisposed over a substrate, wherein the heterostructure comprises firstand second ferromagnetic layers which are separated by an insulatinglayer.

At 704 a pattern of polymer pillars is formed over the heterostructure,wherein a pillar comprises a cylindrical shape.

At 706 a pattern of magnetic memory cells is formed within theheterostructure by etching through the heterostructure while utilizingthe pattern of polymer pillars as a hardmask.

FIG. 8 illustrates some embodiments of a tool arrangement 800 configuredto form an MRAM cell array with a copolymer on a substrate 802. The toolarrangement 800 comprises a spin-on tool 804 configured to receive firstand second polymer species 806A, 806B, and spin-coat the substrate witha copolymer solution comprising the first and second polymer species806A, 806B. The tool arrangement 800 further comprises an anneal tool808. In some embodiments, the anneal tool 808 comprises an ovenconfigured to subject the substrate 802 thermal annealing. In someembodiments, the anneal tool 808 comprises a solvent annealing toolconfigured to subject the substrate 802 to an inert atmosphere (e.g.,argon, etc.). The anneal tool 808 is configured to achieve directself-alignment (DSA) of the copolymer film into a polymer matrixcomprising the first or second polymer species 806A, 806B occupied bymicro-domains comprising the second or first polymer species 806B, 806A,respectively.

The tool arrangement 800 further comprises a UV exposure tool 810configured to provide UV radiation to the substrate 802. In someembodiments, the UV radiation results in cross-linking of units of thefirst or second polymer species 806A, 806B, while simultaneouslydegrading linkage between units of the second or first polymer species806B, 806A, respectively.

The tool arrangement 800 further comprises an etching tool 812. In someembodiments, the etching tool 812 is configured to subject the substrate802 to a RIE process (e.g., 02 plasma RIE) to remove the first or secondpolymer species 806A, 806B from the polymer matrix. In some embodiments,the etching tool 812 is configured to subject the substrate 802 to a dryetch for MJT patterning while utilizing polymer matrix as an HM. In someembodiments, the etching tool 812 is configured to expose the substrate802 to a continuous flow of one or more dry etchants, wet etchants, or acombination of both.

The tool arrangement 800 further comprises an epitaxial growth tool 814configured to deposit material on the substrate 802 through sputterdeposition, MBE, PLD, ALD, e-beam epitaxy, or CVD or derivativeprocesses. In some embodiments, the epitaxial growth tool 814 comprisesa vacuum or ultra-low vacuum (UHV) chamber configured for in situprocessing of the substrate 802.

It will also be appreciated that equivalent alterations and/ormodifications may occur to one of ordinary skill in the art based upon areading and/or understanding of the specification and annexed drawings.The disclosure herein includes all such modifications and alterationsand is generally not intended to be limited thereby. In addition, whilea particular feature or aspect may have been disclosed with respect toonly one of several implementations, such feature or aspect may becombined with one or more other features and/or aspects of otherimplementations as may be desired. Furthermore, to the extent that theterms “includes”, “having”, “has”, “with”, and/or variants thereof areused herein; such terms are intended to be inclusive in meaning—like“comprising.” Also, “exemplary” is merely meant to mean an example,rather than the best. It is also to be appreciated that features, layersand/or elements depicted herein are illustrated with particulardimensions and/or orientations relative to one another for purposes ofsimplicity and ease of understanding, and that the actual dimensionsand/or orientations may differ substantially from that illustratedherein.

The present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed. Moreover, theformation of a first feature on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed interposing the first and secondfeatures, such that the first and second features may not be in directcontact. As an example, a feature formed on a substrate may includefeatures formed on, above, and/or within the substrate.

Therefore, some embodiments of the present disclosure relate to a methodthat achieves a substantially uniform pattern of magnetic random accessmemory (MRAM) cells with a minimum dimension below the lower resolutionlimit of some optical lithography techniques. A copolymer solutioncomprising first and second polymer species is spin-coated over aheterostructure which resides over a surface of a substrate. Theheterostructure comprises first and second ferromagnetic layers whichare separated by an insulating layer. The copolymer solution issubjected to self-assembly into a phase-separated material comprising apattern of micro-domains of the second polymer species within a polymermatrix comprising the first polymer species. The first polymer speciesis then removed, leaving a pattern of micro-domains of the secondpolymer species. A pattern of magnetic memory cells within theheterostructure is formed by etching through the heterostructure whileutilizing the pattern of micro-domains as a hardmask.

In some embodiments, a method of forming a magnetic memory cell isdisclosed. The method comprises forming a heterostructure over a layerof dielectric material disposed over a substrate, wherein theheterostructure comprises first and second ferromagnetic layers whichare separated by an insulating layer. The method further comprisesforming a pattern of polymer pillars over the heterostructure, wherein apillar comprises a cylindrical shape. The method further comprisesforming a pattern of magnetic memory cells within the heterostructurecomprising etching through the heterostructure by utilizing the patternof polymer pillars as a hardmask.

In some embodiments, a method of forming a magnetic memory cell isdisclosed. The method comprises forming a heterostructure over a layerof dielectric material disposed over a substrate, wherein theheterostructure comprises a top and bottom electrode layers disposedabove and below a magnetic tunneling junction layer, and wherein themagnetic tunneling junction layer comprises first and secondferromagnetic layers which are separated by an insulating layer. Themethod further comprises forming a first hardmask layer over theheterostructure. The method further comprises spin-coating a copolymersolution over the first hardmask layer, wherein the copolymer solutioncomprising first and second polymer species, and annealing the substratewhich results in a self-assembly of the copolymer solution into aphase-separated material, wherein the first polymer species forms thepolymer matrix, and the second polymer species forms a pattern ofmicro-domains within the polymer matrix. The method further comprisesremoving the first polymer species which removes the polymer matrix andleaves the pattern of micro-domains of the second polymer species whichform the pattern of polymer pillars for patterning of theheterostructure.

In some embodiments, a magnetic memory device is disclosed, comprising asubstrate and a magnetic tunneling junction disposed over a surface ofthe substrate. The magnetic tunneling junction further comprises a firstferromagnetic layer, a second ferromagnetic layer, and an insulatinglayer which separates the first and second ferromagnetic layers, whereinthe magnetic tunneling junction further comprises a cylindrical shapediameter of less than 40 nm.

In some embodiments, a magnetic memory device comprising a magnetictunneling junction, a top electrode, and a spacer is provided. Themagnetic tunneling junction overlies a bottom electrode, and comprises afirst ferromagnetic layer, an insulating layer overlying the firstferromagnetic layer, and a second ferromagnetic layer overlying theinsulating layer. A width of the magnetic tunneling junction is lessthan about 40 nanometers. The top electrode overlies the magnetictunneling junction, and sidewall surfaces of the top electrode and themagnetic tunneling junction are substantially coplanar. The spacer isarranged over the bottom electrode, and the spacer lines the sidewallsurfaces of the top electrode and the magnetic tunneling junction. Thespacer is arranged laterally between sidewall surfaces of the magnetictunneling junction and the bottom electrode.

In some embodiments, a magnetic memory device comprising first andsecond magnetic tunneling junctions and a sidewall spacer is provided.The first magnetic tunneling junction comprises a first ferromagneticlayer, a first insulating layer overlying the first ferromagnetic layer,and a second ferromagnetic layer overlying the first insulating layer.The sidewall spacer lines sidewall surfaces of the first and secondferromagnetic layers and the first insulating layer. The second magnetictunneling junction comprises a third ferromagnetic layer, a secondinsulating layer overlying the third ferromagnetic layer, and a fourthferromagnetic layer overlying the second insulating layer.

What is claimed is:
 1. A magnetic memory device comprising: a bottomelectrode; a first magnetic tunneling junction (MTJ) overlying thebottom electrode, wherein the first MTJ comprises a pair offerromagnetic layers and an insulating layer between the ferromagneticlayers; a top electrode overlying the first MTJ, wherein theferromagnetic layers, the insulating layer, and the top electrode definea common sidewall that is substantially planar from the bottom electrodeto a top surface of the top electrode; a sidewall spacer overlying thebottom electrode, wherein the sidewall spacer is on the common sidewalland has a curved sidewall that arcs continuously from a sidewall of thebottom electrode to the common sidewall; and a second MTJ neighboringthe first MTJ, wherein a distance between the first and second MTJs isless than about 40 nanometers.
 2. The magnetic memory device accordingto claim 1, wherein the curved sidewall arcs continuously from thesidewall of the bottom electrode to the top surface of the topelectrode.
 3. The magnetic memory device according to claim 1, whereinthe sidewall spacer has a substantially planar sidewall facing, anddirectly contacting, the common sidewall from the bottom electrode tothe top electrode.
 4. The magnetic memory device according to claim 1,wherein the ferromagnetic layers, the insulating layer, and the topelectrode have the same planar top layout.
 5. The magnetic memory deviceaccording to claim 4, wherein the same planar top layout is circular. 6.The magnetic memory device according to claim 1, further comprising: ahard mask overlying the top electrode; and a polymer column overlyingthe hard mask, wherein the hard mask and the polymer column furtherdefine the common sidewall, and wherein the common sidewall is smoothfrom the bottom electrode to a top surface of the polymer column.
 7. Themagnetic memory device according to claim 1, wherein the top electrodeand the first MTJ share a common width, and wherein the common width isless than about 100 nanometers.
 8. The magnetic memory device accordingto claim 1, further comprising: a dielectric layer underlying the bottomelectrode, wherein a top surface of the dielectric layer directlycontacts a bottom surface of the bottom electrode continuously from afirst side of the bottom electrode to a second side of the bottomelectrode opposite the first side when the dielectric layer and thebottom electrode are viewed in cross section.
 9. A magnetic memorydevice comprising: a bottom electrode; a magnetic tunneling junction(MTJ) on the bottom electrode, wherein the MTJ comprises a pair offerromagnetic layers and a dielectric layer between the ferromagneticlayers; a top electrode on the MTJ, wherein the ferromagnetic layers,the dielectric layer, and the top electrode collectively make up acolumnar structure, and wherein the columnar structure is on the bottomelectrode and has a width that is continuous from the bottom electrodeto a top surface of the top electrode; a sidewall spacer bordering thecolumnar structure on the bottom electrode, wherein the sidewall spacerhas a smooth sidewall that faces away from the columnar structure andthat extends continuously from a top corner of the bottom electrode tothe columnar structure; and a poly(methyl methacrylate) (PMMA) orpolystyrene (PS) layer overlying the top electrode, wherein the PMMA orPS layer partially makes up the columnar structure, and wherein thewidth of the columnar structure is continuous from the bottom electrodeto a top surface of the PMMA or PS layer.
 10. The magnetic memory deviceaccording to claim 9, further comprising: a second MTJ neighboring theMTJ, wherein a distance between the MTJ and the second MTJ is less thanabout 40 nanometers.
 11. The magnetic memory device according to claim9, wherein a top edge of the smooth sidewall directly contacts thecolumnar structure.
 12. The magnetic memory device according to claim 9,wherein the width is less than about 40 nanometers.
 13. The magneticmemory device according to claim 9, wherein a bottom corner of thesidewall spacer is square and adjoins an interface at which the bottomelectrode and the columnar structure directly contact.
 14. The magneticmemory device according to claim 9, wherein the columnar structure iscylindrical.
 15. The magnetic memory device according to claim 9,further comprising: a dielectric hard mask on the top electrode, whereinthe dielectric hard mask partially makes up the columnar structure, andwherein the width of the columnar structure is continuous from thebottom electrode to a top surface of the dielectric hard mask.
 16. Amagnetic memory device comprising: a bottom electrode; a magnetictunneling junction (MTJ) overlying the bottom electrode, wherein the MTJhas a width less than about 40 nanometers; a top electrode overlying theMTJ, wherein the top electrode and the MTJ have the same planar toplayout; and a sidewall spacer overlying the bottom electrode andbordering the MTJ, wherein the sidewall spacer and the bottom electrodedefine a common sidewall that is smooth from a bottom corner of thebottom electrode to the top electrode, and wherein the common sidewallhas a curved segment at a top of the common sidewall.
 17. The magneticmemory device according to claim 16, wherein a top edge of the commonsidewall directly contacts a top surface of the top electrode.
 18. Themagnetic memory device according to claim 16, wherein the width of theMTJ is substantially equal to that of a polystyrene (PS) or poly(methylmethacrylate) (PMMA) mask formed by self-assembly frompoly(styrene-block-methylmethacrylate) (PS-b-PMMA).
 19. The magneticmemory device according to claim 16, further comprising: a dielectriclayer underlying the bottom electrode, wherein the dielectric layerdirectly contacts the bottom electrode laterally and continuously acrossan entirety of the bottom electrode from the bottom corner.
 20. Themagnetic memory device according to claim 16, further comprising: asecond MTJ neighboring the MTJ, wherein a distance between the MTJ andthe second MTJ is less than about 40 nanometers.